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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU97 UHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * gold metallization ensures excellent reliability.
BLU97
The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud.
QUICK REFERENCE DATA R.F. performance up to Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 470 PL W 7 Gp dB > 8,5 PINNING - SOT122A. PIN 1 2
handbook, halfpage
C % > 55
DESCRIPTION collector emitter base emitter
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 52 C f > 1 MHz; Tmb = 52 C Storage temperature Operating junction temperature Ptot(d.c.) Ptot(r.f.) Tstg Tj max. max. max. IC ICM max. max. VCBO VCEO VEBO max. max. max.
BLU97
36 V 16 V 3V 1,2 A 3,6 A 17 W 22,5 W 200 C
-65 to +150 C
handbook, halfpage
10
MDA360
handbook, halfpage
40
MDA361
Ptot (W) IC (A) 30
III
1
Tmb = 52 C Th = 70 C
II 20 I
10
10-1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) 160
Rth mb-h = 0,6 K/W.
I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1 MHz).
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE Dissipation = 15 W; Tmb = 25 C From junction to mounting base (d.c. dissipation) (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 7,5 K/W 5,6 K/W 0.6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage, open emitter; IC = 15 mA Collector-emitter breakdown voltage, open base; IC = 30 mA Emitter-base breakdown voltage, open collector; IE = 1,5 mA Collector cut-off current, VBE = 0; VCE = 16 V Second breakdown energy, L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain, IC = 0,9 A; VCE = 10 V Transition frequency at f = 500 MHz(1), -IE = 0,9 A; VCB = 12,5 V Collector capacitance at f = 1 MHz, IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp = 50 s; < 1%. V(BR)CBO V(BR)CEO V(BR)EBO ICES ESBR hFE fT Cc Cre Ccs > > > < > > typ. typ. typ. typ. typ.
BLU97
36 V 16 V 3V 7,5 mA 2,3 mJ 25 100 4,0 GHz 10 pF 7 pF 1,2 pF
handbook, halfpage
120
MDA362
handbook, halfpage
4.8
MDA363
hFE
fT (GHz) 3.2
80
40
1.6
0 0 0.8 1.6 2.4 IC (A) 3.2
0 0 0.8 1.6 2.4 -IE (A) 3.2
Fig.4 Tj = 25 C; VCE = 10 V; typical values.
Fig.5
VCB = 12,5 V; f = 500 MHz; tp = 50 s; Tj = 25 C; typical values.
August 1986
4
Philips Semiconductors
Product specification
UHF power transistor
BLU97
handbook, halfpage
20 Cc
MDA364
(pF) 16
12
8
4
0 0 4 8 12 16 20 VCB (V)
Fig.6 IE = ie = 0; f = 1 MHz; typical values.
APPLICATION INFORMATION R.F. performance in common-emitter circuit; class-B: f = 470 MHz; Th = 25 C MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 7 < typ. PS W 0,99 0,55 > typ. Gp dB 8,5 < 11,0 typ. IC A 1,0 0,8 > typ. C % 55 70
handbook, full pagewidth
C1
50 C2 C4
C3
,, ,,
L1 L3
T.U.T.
,,
L6 C5 L4
L7
C8 50 C7
L5 C6 R2
L2
R1
+VCC
MDA365
Fig.7 Class-B test circuit at f = 470 MHz.
August 1986
5
Philips Semiconductors
Product specification
UHF power transistor
List of components: C1 C2 C3 C4 C5 C6 L1 L2 L3 L5 L6 L7 R1 = 2,7 pF multilayer ceramic chip capacitor(1) = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) = 7,5 pF multilayer ceramic chip capacitor(1) = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) = 100 pF multilayer ceramic chip capacitor = 100 nF metallized film capacitor = 38 stripline (22,5 mm x 6,0 mm) = 15 nH; 1 turn Cu wire (1,0 mm); int. dia. 5 mm; leads 2 x 5 mm = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) = 29 nH; 2 turns enamelled Cu wire (1,0 mm); int. dia. 6 mm; length 3,5 mm; leads 2 x 5 mm = 38 stripline (10,0 mm x 6,0 mm) = 7 nH; 1/2 turn Cu wire (1,0 mm); int. dia. 5,0 mm; leads 2 x 5 mm = R2 = 10 10%; 0,25 W metal film resistor
BLU97
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74); thickness 116 inch. Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality.
August 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLU97
handbook, full pagewidth
100 mm
58 mm
rivets
L3
R1 C1 C3 L2
L7 C2 L1 L6 C8
L5 C4 C6 C5 L4 C7
+VCC
R2
MDA366
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by hollow rivets and also by copper straps under the emitters.
Fig.8 Printed circuit board and component lay-out for 470 MHz class-B test circuit.
August 1986
7
Philips Semiconductors
Product specification
UHF power transistor
BLU97
handbook, halfpage
10 PL
MDA367
handbook, halfpage
(W) 8
20 Gp (dB) 16
MDA368
100 C (%) 80
C 12 Gp 60
6
4
8
40
2
4
20
0 0 0.4 0.8 PS (W) 1.2
0 0 2 4 6 8 PL (W) 10
0
VCE = 12,5 V; f = 470 MHz; Th = 25 C; class-B operation; typical values.
VCE = 12,5 V; f = 470 MHz; Th = 25 C; class-B operation; typical values.
Fig.9 Load power vs. source power.
Fig.10 Power gain and efficiency vs. load power.
RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and Th = 25 C.
August 1986
8
Philips Semiconductors
Product specification
UHF power transistor
BLU97
handbook, halfpage
3
MDA369
handbook, halfpage
8
MDA370
Zi () 2
ri
ZL () 6
RL
xi 1 4
0
2
-1 400
XL 440 480 520 560 600 f (MHz) 0 400 440 480 520 560 600 f (MHz)
VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values.
VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values.
Fig.11 Input impedance (series components).
Fig.12 Load impedance (series components).
handbook, halfpage
16
MDA371
Gp (dB) 12
8
4
0 400
440
480
520
560 600 f (MHz)
VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values.
Fig.13 Power gain vs. frequency.
August 1986
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLU97
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU97
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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